Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/9/43/025
Title: Ionization probability of Si+ ion emission from clean Si under Ar+ bombardment
Authors: Low, M.H.S.
Huan, C.H.A. 
Wee, A.T.S. 
Tan, K.L. 
Issue Date: 27-Oct-1997
Source: Low, M.H.S., Huan, C.H.A., Wee, A.T.S., Tan, K.L. (1997-10-27). Ionization probability of Si+ ion emission from clean Si under Ar+ bombardment. Journal of Physics Condensed Matter 9 (43) : 9427-9433. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/9/43/025
Abstract: The secondary-ion intensity of sputtered Si has been measured as a function of the emission energy using a previously calibrated mass analyser. From the Sigmund-Thompson energy distribution for neutrals, the ionization probability R+ for Si+ ions is inferred. It is found that the behaviour of R+ at high emission energies is consistent with neutralization via the electron tunnelling mechanism (resonant electrons tunnelling from the substrate to the outgoing ions). The possibility of electronic excitations induced by the collision cascade in Sroubek's model is also considered.
Source Title: Journal of Physics Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/97002
ISSN: 09538984
DOI: 10.1088/0953-8984/9/43/025
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