Ionization cross sections of excitons due to scattering by excitons in semiconducting quantum well structures in the presence of a transverse electric field

Abstract

We have performed theoretical calculations on the ionization cross-sections of excitons due to scattering by excitons in semiconducting quantum well structures in the presence of an applied transverse electric field. It was found that for the range of incident energies higher than the binding energy of the excitons, the exciton-exciton ionization cross-sections become increasingly important relative to that due to free carrier-exciton scattering as the electric field increases. Quasi three-dimensional features in the ionization cross-sections exhibited by the excitons in the very narrow wells are found to be rather insensitive to changes in electric field strength. © 1997 Elsevier Science Ltd. All rights reserved.