Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0169-4332(01)00190-8
Title: Ion-induced nitridation of GaAs(1 0 0) surface
Authors: Li, Y.G.
Wee, A.T.S. 
Huan, C.H.A. 
Zheng, J.C. 
Keywords: AFM
GaAs(1 0 0)
Gallium nitride
Ion beam
Nitridation
XPS
Issue Date: 30-Apr-2001
Source: Li, Y.G., Wee, A.T.S., Huan, C.H.A., Zheng, J.C. (2001-04-30). Ion-induced nitridation of GaAs(1 0 0) surface. Applied Surface Science 174 (3-4) : 275-282. ScholarBank@NUS Repository. https://doi.org/10.1016/S0169-4332(01)00190-8
Abstract: The ion-induced nitridation of GaAs(100) using 1.2 keV N2 + ion beams has been investigated using in situ X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Ga-rich surfaces produced by Ar+ cleaning, promote initial nitridation and formation of GaN. The dependence of [N]/[Ga] and [As]/[Ga] atomic ratios on substrate temperature, nitridation time, and nitrided layer depth suggest that the process is self-limiting. The degree of nitridation increases with the temperature, but decreases again at higher temperatures (>450°C). Smooth nitrided layers are formed between room temperature and 450°C. For nitridation at T = 600°C however, the aggregation of GaAs1-xNx results in the roughening of the nitrided surfaces. Diffusion, sputtering, and decomposition effects in the nitridation process are considered, and the mechanisms of GaAs1-xNx formation are discussed. © 2001 Elsevier Science B.V.
Source Title: Applied Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/96999
ISSN: 01694332
DOI: 10.1016/S0169-4332(01)00190-8
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