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|Title:||Ion-induced nitridation of GaAs(1 0 0) surface|
GaAs(1 0 0)
|Source:||Li, Y.G., Wee, A.T.S., Huan, C.H.A., Zheng, J.C. (2001-04-30). Ion-induced nitridation of GaAs(1 0 0) surface. Applied Surface Science 174 (3-4) : 275-282. ScholarBank@NUS Repository. https://doi.org/10.1016/S0169-4332(01)00190-8|
|Abstract:||The ion-induced nitridation of GaAs(100) using 1.2 keV N2 + ion beams has been investigated using in situ X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Ga-rich surfaces produced by Ar+ cleaning, promote initial nitridation and formation of GaN. The dependence of [N]/[Ga] and [As]/[Ga] atomic ratios on substrate temperature, nitridation time, and nitrided layer depth suggest that the process is self-limiting. The degree of nitridation increases with the temperature, but decreases again at higher temperatures (>450°C). Smooth nitrided layers are formed between room temperature and 450°C. For nitridation at T = 600°C however, the aggregation of GaAs1-xNx results in the roughening of the nitrided surfaces. Diffusion, sputtering, and decomposition effects in the nitridation process are considered, and the mechanisms of GaAs1-xNx formation are discussed. © 2001 Elsevier Science B.V.|
|Source Title:||Applied Surface Science|
|Appears in Collections:||Staff Publications|
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