Please use this identifier to cite or link to this item:
|Title:||Interface strain study of thin Lu2O3/Si using HRBS|
|Authors:||Chan, T.K. |
Lu2O3 thin films
|Citation:||Chan, T.K., Darmawan, P., Ho, C.S., Malar, P., Lee, P.S., Osipowicz, T. (2008-04). Interface strain study of thin Lu2O3/Si using HRBS. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 266 (8) : 1486-1489. ScholarBank@NUS Repository. https://doi.org/10.1016/j.nimb.2007.12.090|
|Abstract:||The interface of thin Lu2O3 on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. Among them, Lu2O3 has been found to have the highest lattice energy and largest band gap, making it a good candidate for an alternative high-k gate dielectric. HRBS depth profiling results have shown the existence of a thin (∼2 nm) transitional silicate layer beneath the Lu2O3 films. The thicknesses of the Lu2O3 films were found to be ∼8 nm and the films were determined to be non-crystalline. Angular scans were performed across the [1 1 0] and [1 1 1] axis along planar channels, and clear shifts in the channeling minimum indicate the presence of Si lattice strain at the silicate/Si interface. © 2008 Elsevier B.V. All rights reserved.|
|Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 12, 2019
WEB OF SCIENCETM
checked on Jan 2, 2019
checked on Dec 28, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.