Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-X
Title: Inter-diffusion studies of SrBi2Ta2O9 film prepared on platinized wafer by pulsed laser ablation
Authors: Jiang, X.H.
Tay, S.T.
Wee, A.T.S. 
Huan, C.H.A. 
Liu, J.M.
Issue Date: 1999
Citation: Jiang, X.H.,Tay, S.T.,Wee, A.T.S.,Huan, C.H.A.,Liu, J.M. (1999). Inter-diffusion studies of SrBi2Ta2O9 film prepared on platinized wafer by pulsed laser ablation. Surface and Interface Analysis 28 (1) : 217-220. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-X
Abstract: Ferroelectric SrBi2Ta2O9 (SBT) thin films were prepared on platinized wafer - Pt/TiOx/SiO2/Si - by pulsed laser ablation deposition. Phase formation of SBT film was achieved during the deposition process itself, so the post-annealing that is often used by other groups is not necessary. The SBT film was well-crystallized, showing a dominant (115) peak at a deposition temperature as low as 580 °C, and exhibited good ferroelectric properties - the remanent polarization and coercive electrical field are 7.1 μC cm-2 (2Pr) and 30 kV cm-1, respectively, at an applied electrical field of 80 kV cm-1. Secondary ion mass spectrometry depth profiling and cross-sectional transmission electron microscopy were performed to study the inter-diffusion at the SBT/Pt bottom electrode interface. A sharp SBT/Pt interface was observed at a deposition temperature of 580 °C, but a higher deposition temperature (680 °C) resulted in significant inter-diffusion at the SBT/Pt interface. The formation of a secondary pyrochlore phase was observed due to Ti diffusion into SBT film at a high deposition temperature of 680 °C.
Source Title: Surface and Interface Analysis
URI: http://scholarbank.nus.edu.sg/handle/10635/96955
ISSN: 01422421
DOI: 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-X
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