Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1393526
Title: Integrity of copper-tantalum nitride metallization under different ambient conditions
Authors: Yap, K.P.
Gong, H. 
Dai, J.Y.
Osipowicz, T. 
Chan, L.H.
Lahiri, S.K.
Issue Date: Jun-2000
Citation: Yap, K.P., Gong, H., Dai, J.Y., Osipowicz, T., Chan, L.H., Lahiri, S.K. (2000-06). Integrity of copper-tantalum nitride metallization under different ambient conditions. Journal of the Electrochemical Society 147 (6) : 2312-2318. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1393526
Abstract: The integrity of the Cu/IMP Ta2.3N metallization under different annealing ambients has been investigated by Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), X-ray diffractometry (XRD), Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy techniques. Results from XRD and TEM show that the as-deposited amorphous Ta2.3N barrier crystallizes upon annealing at 500°C, forming a Ta2N crystalline phase. The sheet resistance of Cu/Ta2.3N metallization remains unchanged upon annealing in Ar or N2 up to 750°C. No observable interdiffusion was detected by RBS upon annealing at temperatures below 500°C in Ar or N2. However, above 500°C, the integrity of Cu/Ta2.3N metallization begins to degrade due to out-diffusion of a small amount of Ta into Cu. On the other hand, in an N2/20% O2 ambient, the sheet resistance of the metallization is found to increase drastically upon annealing at a temperature above 200°C, an observation that has been attributed to the formation of porous Cu oxide layer. Delamination of Cu oxide from oxide/barrier interface occurs at 400°C. The result highlights the importance of isolating Cu/Ta2.3N metallization from oxygen exposure during back end processing.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/96947
ISSN: 00134651
DOI: 10.1149/1.1393526
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