Please use this identifier to cite or link to this item:
Title: Integrity of copper-tantalum nitride metallization under different ambient conditions
Authors: Yap, K.P.
Gong, H. 
Dai, J.Y.
Osipowicz, T. 
Chan, L.H.
Lahiri, S.K.
Issue Date: Jun-2000
Citation: Yap, K.P., Gong, H., Dai, J.Y., Osipowicz, T., Chan, L.H., Lahiri, S.K. (2000-06). Integrity of copper-tantalum nitride metallization under different ambient conditions. Journal of the Electrochemical Society 147 (6) : 2312-2318. ScholarBank@NUS Repository.
Abstract: The integrity of the Cu/IMP Ta2.3N metallization under different annealing ambients has been investigated by Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), X-ray diffractometry (XRD), Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy techniques. Results from XRD and TEM show that the as-deposited amorphous Ta2.3N barrier crystallizes upon annealing at 500°C, forming a Ta2N crystalline phase. The sheet resistance of Cu/Ta2.3N metallization remains unchanged upon annealing in Ar or N2 up to 750°C. No observable interdiffusion was detected by RBS upon annealing at temperatures below 500°C in Ar or N2. However, above 500°C, the integrity of Cu/Ta2.3N metallization begins to degrade due to out-diffusion of a small amount of Ta into Cu. On the other hand, in an N2/20% O2 ambient, the sheet resistance of the metallization is found to increase drastically upon annealing at a temperature above 200°C, an observation that has been attributed to the formation of porous Cu oxide layer. Delamination of Cu oxide from oxide/barrier interface occurs at 400°C. The result highlights the importance of isolating Cu/Ta2.3N metallization from oxygen exposure during back end processing.
Source Title: Journal of the Electrochemical Society
ISSN: 00134651
DOI: 10.1149/1.1393526
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Mar 14, 2019


checked on Mar 6, 2019

Page view(s)

checked on Jan 25, 2019

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.