Please use this identifier to cite or link to this item: https://doi.org/10.1049/el.2010.0713
Title: InSbN based p-n junctions for infrared photodetection
Authors: Chen, X.Z.
Zhang, D.H.
Liu, W.
Wang, Y.
Li, J.H.
Wee, A.T.S. 
Ramam, A.
Issue Date: 27-May-2010
Citation: Chen, X.Z., Zhang, D.H., Liu, W., Wang, Y., Li, J.H., Wee, A.T.S., Ramam, A. (2010-05-27). InSbN based p-n junctions for infrared photodetection. Electronics Letters 46 (11) : 787-788. ScholarBank@NUS Repository. https://doi.org/10.1049/el.2010.0713
Abstract: InSbN p-n junctions prepared by N+ and Mg+ implantation into InSb wafers for long wavelength infrared photodetection are demonstrated for the first time. The detection wavelength can be controlled by monitoring the implanted nitrogen. The measured peak wavelengths are consistent with the bandgaps of the alloys calculated using a 10-band k·p model based on In-N bond. © 2010 The Institution of Engineering and Technology.
Source Title: Electronics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96942
ISSN: 00135194
DOI: 10.1049/el.2010.0713
Appears in Collections:Staff Publications

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