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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4757938
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dc.titleInfluence of target composition and deposition temperature on the domain structure of BiFeO3 thin films
dc.contributor.authorGuo, R.
dc.contributor.authorYou, L.
dc.contributor.authorMotapothula, M.
dc.contributor.authorZhang, Z.
dc.contributor.authorBreese, M.B.H.
dc.contributor.authorChen, L.
dc.contributor.authorWu, D.
dc.contributor.authorWang, J.
dc.date.accessioned2014-10-16T09:29:09Z
dc.date.available2014-10-16T09:29:09Z
dc.date.issued2012
dc.identifier.citationGuo, R., You, L., Motapothula, M., Zhang, Z., Breese, M.B.H., Chen, L., Wu, D., Wang, J. (2012). Influence of target composition and deposition temperature on the domain structure of BiFeO3 thin films. AIP Advances 2 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4757938
dc.identifier.issn21583226
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96923
dc.description.abstractDomain structure of BiFeO3 thin films can be controlled by adjusting the target composition or the substrate temperature during pulsed laser deposition. Decreasing Bi content in the target or increasing substrate temperature changes the domain structure of BiFeO3 from 71° to 109°. We suggest that a combination of interface effect and defect induced internal field causes this evolution. © 2012 Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4757938
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4757938
dc.description.sourcetitleAIP Advances
dc.description.volume2
dc.description.issue4
dc.description.page-
dc.identifier.isiut000312828700017
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