Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.materresbull.2011.10.022
Title: In situ observation of self-assembled Fe 13Ge 8 nanowires growth on anisotropic Ge (1 1 0) surface
Authors: Li, Z.-P.
Tok, E. 
Foo, Y.
Keywords: A. Nanostructures
A. Semiconductors
B. Epitaxial growth
C. Electron diffraction
C. Electron microscopy
Issue Date: Feb-2012
Source: Li, Z.-P., Tok, E., Foo, Y. (2012-02). In situ observation of self-assembled Fe 13Ge 8 nanowires growth on anisotropic Ge (1 1 0) surface. Materials Research Bulletin 47 (2) : 438-444. ScholarBank@NUS Repository. https://doi.org/10.1016/j.materresbull.2011.10.022
Abstract: Self-assembled iron germanide nanowires (NWs) were grown by directly depositing Fe onto a Ge (1 1 0) substrate, in an in situ ultra-high vacuum transmission electron microscope from 430 to 500 °C. All observed NWs had a similar length/width aspect ratio (∼8:1) at all deposition temperatures, as well as the same elongation orientation with respect to the underlying Ge (1 1 0) substrate. The growth dynamics was investigated by real time observations of NWs growth at elevated temperatures. It is elucidated that the formation of NWs in similar shape at all deposited temperatures is attributed to the similar activation energy barriers in length and width of NWs, which can result in the constant growth rate independent of growth temperatures. Furthermore, the difference in pre-exponential factor along the length and width of growing islands arose due to the anisotropic constraint of the Ge (1 1 0) substrate, leading to the unique elongation of NWs. This growth dynamics suggests the possibility of uniform control of the morphology of self-assembled NWs, as well as other morphologies of bottom-up fabricated devices, at different deposition temperatures. © 2011 Elsevier Ltd. All rights reserved.
Source Title: Materials Research Bulletin
URI: http://scholarbank.nus.edu.sg/handle/10635/96892
ISSN: 00255408
DOI: 10.1016/j.materresbull.2011.10.022
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