Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.48.17064
Title: Impurity-induced phonon disordering in Cd1-xZnxTe ternary alloys
Authors: Talwar, D.N.
Feng, Z.C. 
Becla, P.
Issue Date: 1993
Source: Talwar, D.N., Feng, Z.C., Becla, P. (1993). Impurity-induced phonon disordering in Cd1-xZnxTe ternary alloys. Physical Review B 48 (23) : 17064-17071. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.48.17064
Abstract: A comprehensive study of impurity-induced phonon disordering in Cd1-xZnxTe alloys is reported for a variety of samples (with composition ranging from x=0.0050.5, and 1) by using far-infrared reflectivity and Raman-scattering spectroscopy. Substantial differences were noted among the various published values for the optical-phonon frequencies versus x. Contrary to an earlier Raman study on molecular-beam-epitaxy grown Cd1-xZnxTe/GaAs films, our results yield increases in the numbers of both the CdTe- and ZnTe-like TO phonons with x. A modified random-element isodisplacement model provides excellent fits to the optical phonons. The effects of impurity-induced phonon disordering are studied, within the band mode region, by using an average-t-matrix formalism. Unlike earlier speculations in which a gap mode in ZnTe:Cd lies near 140145 cm-1, our theory predicts it to be at a higher frequency, 153 cm-1. Group-theoretical analysis suggests that the gap mode exhibits a triply degenerate vibrational state and it can be detected both by IR absorption and Raman-scattering spectroscopy. © 1993 The American Physical Society.
Source Title: Physical Review B
URI: http://scholarbank.nus.edu.sg/handle/10635/96889
ISSN: 01631829
DOI: 10.1103/PhysRevB.48.17064
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