Please use this identifier to cite or link to this item:
|Title:||Impurity-induced phonon disordering in Cd1-xZnxTe ternary alloys|
|Citation:||Talwar, D.N., Feng, Z.C., Becla, P. (1993). Impurity-induced phonon disordering in Cd1-xZnxTe ternary alloys. Physical Review B 48 (23) : 17064-17071. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.48.17064|
|Abstract:||A comprehensive study of impurity-induced phonon disordering in Cd1-xZnxTe alloys is reported for a variety of samples (with composition ranging from x=0.0050.5, and 1) by using far-infrared reflectivity and Raman-scattering spectroscopy. Substantial differences were noted among the various published values for the optical-phonon frequencies versus x. Contrary to an earlier Raman study on molecular-beam-epitaxy grown Cd1-xZnxTe/GaAs films, our results yield increases in the numbers of both the CdTe- and ZnTe-like TO phonons with x. A modified random-element isodisplacement model provides excellent fits to the optical phonons. The effects of impurity-induced phonon disordering are studied, within the band mode region, by using an average-t-matrix formalism. Unlike earlier speculations in which a gap mode in ZnTe:Cd lies near 140145 cm-1, our theory predicts it to be at a higher frequency, 153 cm-1. Group-theoretical analysis suggests that the gap mode exhibits a triply degenerate vibrational state and it can be detected both by IR absorption and Raman-scattering spectroscopy. © 1993 The American Physical Society.|
|Source Title:||Physical Review B|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 14, 2019
WEB OF SCIENCETM
checked on Mar 6, 2019
checked on Mar 8, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.