Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2995856
Title: Impact of self-assembled monolayer on low frequency noise of organic thin film transistors
Authors: Ke, L.
Dolmanan, S.B.
Shen, L.
Vijila, C.
Chua, S.J.
Png, R.-Q. 
Chia, P.-J. 
Chua, L.-L. 
Ho, P.K.-H. 
Issue Date: 2008
Source: Ke, L., Dolmanan, S.B., Shen, L., Vijila, C., Chua, S.J., Png, R.-Q., Chia, P.-J., Chua, L.-L., Ho, P.K.-H. (2008). Impact of self-assembled monolayer on low frequency noise of organic thin film transistors. Applied Physics Letters 93 (15) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2995856
Abstract: Bottom-contact organic field-effect transistors (FETs) based on regioregular poly(3-hexylthiophene) were fabricated with different surface treatments and were evaluated using a low frequency noise (LFN) spectroscopy. The oxygen-plasma (OP) treated device shows the highest mobility with the lowest current fluctuation. Octadecyltrichlorosilane and perfluorodecyldimetylchlorosilane treated device gives a higher noise compared with the OP treated device. Hexamethyldisilazane treated devices show the highest noise but the lowest mobility. The LFN results are correlated with organic FET device mobility and stability, proved by channel material crystallinity and degree of dislocations analysis. LFN measurement provides a nondisruptive and direct methodology to characterize device performance. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96875
ISSN: 00036951
DOI: 10.1063/1.2995856
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

7
checked on Feb 15, 2018

WEB OF SCIENCETM
Citations

8
checked on Feb 7, 2018

Page view(s)

24
checked on Feb 13, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.