Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1378309
DC Field | Value | |
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dc.title | Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation | |
dc.contributor.author | Li, K. | |
dc.contributor.author | Chen, S.Y. | |
dc.contributor.author | Shen, Z.X. | |
dc.date.accessioned | 2014-10-16T09:28:24Z | |
dc.date.available | 2014-10-16T09:28:24Z | |
dc.date.issued | 2001-06-18 | |
dc.identifier.citation | Li, K., Chen, S.Y., Shen, Z.X. (2001-06-18). Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation. Applied Physics Letters 78 (25) : 3989-3991. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1378309 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96863 | |
dc.description.abstract | A refractory-metal-free C40 TiSi2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi2 has a hexagonal structure with the space group P6222(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi2 can be directly achieved from C40 TiSi2 at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi2 into the subquarter micron region in semiconductor device fabrication. © D 2001 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1378309 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1063/1.1378309 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 78 | |
dc.description.issue | 25 | |
dc.description.page | 3989-3991 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000169339800022 | |
Appears in Collections: | Staff Publications |
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