Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1378309
Title: Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation
Authors: Li, K.
Chen, S.Y.
Shen, Z.X. 
Issue Date: 18-Jun-2001
Citation: Li, K., Chen, S.Y., Shen, Z.X. (2001-06-18). Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation. Applied Physics Letters 78 (25) : 3989-3991. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1378309
Abstract: A refractory-metal-free C40 TiSi2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi2 has a hexagonal structure with the space group P6222(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi2 can be directly achieved from C40 TiSi2 at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi2 into the subquarter micron region in semiconductor device fabrication. © D 2001 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96863
ISSN: 00036951
DOI: 10.1063/1.1378309
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