Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1378309
Title: | Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation | Authors: | Li, K. Chen, S.Y. Shen, Z.X. |
Issue Date: | 18-Jun-2001 | Citation: | Li, K., Chen, S.Y., Shen, Z.X. (2001-06-18). Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation. Applied Physics Letters 78 (25) : 3989-3991. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1378309 | Abstract: | A refractory-metal-free C40 TiSi2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi2 has a hexagonal structure with the space group P6222(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi2 can be directly achieved from C40 TiSi2 at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi2 into the subquarter micron region in semiconductor device fabrication. © D 2001 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/96863 | ISSN: | 00036951 | DOI: | 10.1063/1.1378309 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.