Please use this identifier to cite or link to this item:
|Title:||Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation|
|Citation:||Li, K., Chen, S.Y., Shen, Z.X. (2001-06-18). Identification of refractory-metal-free C40 TiSi2 for low temperature C54 TiSi2 formation. Applied Physics Letters 78 (25) : 3989-3991. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1378309|
|Abstract:||A refractory-metal-free C40 TiSi2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi2 has a hexagonal structure with the space group P6222(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi2 can be directly achieved from C40 TiSi2 at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi2 into the subquarter micron region in semiconductor device fabrication. © D 2001 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 13, 2018
WEB OF SCIENCETM
checked on Jun 12, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.