Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/96849
DC Field | Value | |
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dc.title | Hydrogen passivation of aluminium atoms in crystalline silicon | |
dc.contributor.author | Chia, L.S. | |
dc.contributor.author | Goh, N.K. | |
dc.contributor.author | Khoo, G.S. | |
dc.contributor.author | Ong, C.K. | |
dc.date.accessioned | 2014-10-16T09:28:15Z | |
dc.date.available | 2014-10-16T09:28:15Z | |
dc.date.issued | 1991 | |
dc.identifier.citation | Chia, L.S., Goh, N.K., Khoo, G.S., Ong, C.K. (1991). Hydrogen passivation of aluminium atoms in crystalline silicon. Journal of Physics: Condensed Matter 3 (48) : 9613-9620. ScholarBank@NUS Repository. | |
dc.identifier.issn | 09538984 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96849 | |
dc.description.abstract | The total energy profile or surface for Al-H complexes in a large silicon cluster has been calculated using a self-consistent semi-empirical method. The diffusion path of hydrogen appears to be confined to a low-energy channel in the vicinity of the Si atom which is bonded directly to the Al atom at a substitutional site. The most stable configuration of this Al-H system results when the H atom is located at the bond-centred (BC) site. The system probably contains a Si-H-Al three-centre bond structure of bridging nature. This finding is compared with the Al-H pair assignment based on infrared experiments given by Stavola and co-workers which is based on the Al-H frequency calculated by DeLeo and Fowler. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.sourcetitle | Journal of Physics: Condensed Matter | |
dc.description.volume | 3 | |
dc.description.issue | 48 | |
dc.description.page | 9613-9620 | |
dc.identifier.isiut | A1991GU32700003 | |
Appears in Collections: | Staff Publications |
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