Please use this identifier to cite or link to this item: https://doi.org/8/009
Title: Hole trapping properties of germanium in α-quartz
Authors: Zhang, X. 
Ong, C.K. 
Issue Date: 1995
Source: Zhang, X.,Ong, C.K. (1995). Hole trapping properties of germanium in α-quartz. Journal of Physics Condensed Matter 7 (8) : 1603-1615. ScholarBank@NUS Repository. https://doi.org/8/009
Abstract: We present the first calculation of the self-trapping properties of germanium in α-quartz using the classic defect simulation technique. Our calculation suggests that it is easier for a hole to be self-trapped at oxygen ions next to a Ge3+ ion than a Ge4+ ion, which is in agreement with the experimental results. The hole self-trapping next to Ge3+ is accompanied by a large network distortion. Our results indicate that the most favourable hole trapping site is the next-nearest-neighbour oxygen to the Ge3+ ion, rather than the nearest-neighbour oxygens. Examining the most favourable hole trapping sites, we suggest that the distortion in the Si-O-Si bond angle plays a more important role in hole self-trapping than that in the Si-O bond length.
Source Title: Journal of Physics Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/96828
ISSN: 09538984
DOI: 8/009
Appears in Collections:Staff Publications

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