Please use this identifier to cite or link to this item:
|Title:||High thermoelectric figure of merit in silicon-germanium superlattice structured nanowires|
|Source:||Shi, L., Jiang, J., Zhang, G., Li, B. (2012-12-03). High thermoelectric figure of merit in silicon-germanium superlattice structured nanowires. Applied Physics Letters 101 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4769443|
|Abstract:||By using a combination of the first-principles density functional theory and nonequilibrium Greens function for electron and phonon transport, we investigate the thermoelectric properties of silicon-germanium superlattice nanowires (NWs). Our results show that introducing superlattice structures always increases thermoelectric figure of merit, ZT, which depends on the periodic length of the superlattice NWs. For n-type superlattice NWs, the achievable maximum ZT is 4.7, which is 5-fold increase as compared to the equivalent pristine silicon NWs. For p-type wires, the achieved maximum ZT is 2.74, which is 4.6-fold increase as compared to the pristine silicon NWs. © 2012 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 19, 2018
WEB OF SCIENCETM
checked on Feb 12, 2018
checked on Feb 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.