Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4769443
Title: High thermoelectric figure of merit in silicon-germanium superlattice structured nanowires
Authors: Shi, L.
Jiang, J. 
Zhang, G.
Li, B. 
Issue Date: 3-Dec-2012
Citation: Shi, L., Jiang, J., Zhang, G., Li, B. (2012-12-03). High thermoelectric figure of merit in silicon-germanium superlattice structured nanowires. Applied Physics Letters 101 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4769443
Abstract: By using a combination of the first-principles density functional theory and nonequilibrium Greens function for electron and phonon transport, we investigate the thermoelectric properties of silicon-germanium superlattice nanowires (NWs). Our results show that introducing superlattice structures always increases thermoelectric figure of merit, ZT, which depends on the periodic length of the superlattice NWs. For n-type superlattice NWs, the achievable maximum ZT is 4.7, which is 5-fold increase as compared to the equivalent pristine silicon NWs. For p-type wires, the achieved maximum ZT is 2.74, which is 4.6-fold increase as compared to the pristine silicon NWs. © 2012 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96798
ISSN: 00036951
DOI: 10.1063/1.4769443
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