Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2828040
Title: High perpendicular coercive field of (100)-oriented CoFe2 O4 thin films on Si (100) with MgO buffer layer
Authors: Ning, M.
Li, J. 
Ong, C.K. 
Wang, S.J.
Issue Date: 2008
Citation: Ning, M., Li, J., Ong, C.K., Wang, S.J. (2008). High perpendicular coercive field of (100)-oriented CoFe2 O4 thin films on Si (100) with MgO buffer layer. Journal of Applied Physics 103 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2828040
Abstract: CoFe2 O4 thin films with large perpendicular magnetic anisotropy were obtained by pulsed laser deposition on Si(100) substrates with MgO buffer layers. Transmission electron microscopy study reveals the columnar structure of these CoFe2 O4 films and confirms their (100) texture. Magnetic properties of these films have been investigated in the function of substrate temperature and film thickness. A perpendicular coercivity as high as 7.8 kOe has been achieved in the CoFe2 O4 film deposited at 700 °C, with a thickness of 50 nm and a grain size of 30 nm. The high coercivity mechanism is possibly associated with the magnetocrystalline anisotropy, the strain anisotropy, the shape anisotropy due to the columnar structure, and also the appropriate grain size approaching the single-domain critical value. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96782
ISSN: 00218979
DOI: 10.1063/1.2828040
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