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https://doi.org/10.1063/1.2969053
DC Field | Value | |
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dc.title | Half-metallic NiO in zinc-blende structure from ab initio calculations | |
dc.contributor.author | Wu, R.Q. | |
dc.contributor.author | Feng, Y.P. | |
dc.contributor.author | Ouyang, Y.F. | |
dc.contributor.author | Zhou, P. | |
dc.contributor.author | Hu, C.H. | |
dc.date.accessioned | 2014-10-16T09:27:14Z | |
dc.date.available | 2014-10-16T09:27:14Z | |
dc.date.issued | 2008 | |
dc.identifier.citation | Wu, R.Q., Feng, Y.P., Ouyang, Y.F., Zhou, P., Hu, C.H. (2008). Half-metallic NiO in zinc-blende structure from ab initio calculations. Journal of Applied Physics 104 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2969053 | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96761 | |
dc.description.abstract | Structural and electronic properties of NiO in the zinc-blende (zb) structure have been studied by ab initio calculations based on density functional theory. The results show that zb-NiO has a half-metallic band structure and its lattice constant is compatible to that of wide gap semiconductors such as SiC, GaN, and ZnO. The half-metallic character can survive the in-plane strain from the wide gap semiconductor substrates. Thus, our calculations indicate that NiO can be a potential half metal for these wide gap semiconductors for spin injection. © 2008 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2969053 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1063/1.2969053 | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 104 | |
dc.description.issue | 4 | |
dc.description.page | - | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | 000259265100115 | |
Appears in Collections: | Staff Publications |
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