Please use this identifier to cite or link to this item:
|Title:||Growth and characteristics of Ge on Ru(0001)|
|Source:||Hu, F.,Zhang, H.-J.,Lu, B.,Tao, Y.-S.,Li, H.-Y.,Bao, S.-N.,He, P.-M.,Wang, X.S. (2005-03). Growth and characteristics of Ge on Ru(0001). Wuli Xuebao/Acta Physica Sinica 54 (3) : 1330-1333. ScholarBank@NUS Repository.|
|Abstract:||Scanning tunneling microscopy (STM) and x-ray photoemission spectroscopy (XPS) studies of germanium growth on Ru(0001) were carried out. STM measurements showed a typical Stranski-Krastanov growth mode of Ge on Ru(0001), i.e. first atomic wetting layer is formed in the submololayer range, and the formation of islands on top of a flat first layer occurs for subsequent layers. XPS measurements showed a weak interaction between Ge and the substrate of Ru(0001). The Ru 3d5/2 and Ru 3d3/2 corelevels of Ru(0001) are located at 279.8 and 284.0 eV in binding energy respectively. Upon Ge growth, up to a thickness of about 20 atomic layers, the Ru 3d corelevels shift downward in binding energy by an amount of about 0.2 eV, while the Ge 3d corelevel shift upward in binding energy from the Ge low coverage limit of 28.9 eV to 29.0 eV, with a relative change of 0.1 eV.|
|Source Title:||Wuli Xuebao/Acta Physica Sinica|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 15, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.