Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4799970
Title: Graphene oxide gate dielectric for graphene-based monolithic field effect transistors
Authors: Eda, G. 
Nathan, A.
Wöbkenberg, P.
Colleaux, F.
Ghaffarzadeh, K.
Anthopoulos, T.D.
Chhowalla, M.
Issue Date: 1-Apr-2013
Citation: Eda, G., Nathan, A., Wöbkenberg, P., Colleaux, F., Ghaffarzadeh, K., Anthopoulos, T.D., Chhowalla, M. (2013-04-01). Graphene oxide gate dielectric for graphene-based monolithic field effect transistors. Applied Physics Letters 102 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4799970
Abstract: We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET. © 2013 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96737
ISSN: 00036951
DOI: 10.1063/1.4799970
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