Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3623567
Title: Graphene on β-Si 3N 4: An ideal system for graphene-based electronics
Authors: Yang, M. 
Zhang, C. 
Wang, S.
Feng, Y. 
Ariando 
Issue Date: 2011
Citation: Yang, M., Zhang, C., Wang, S., Feng, Y., Ariando (2011). Graphene on β-Si 3N 4: An ideal system for graphene-based electronics. AIP Advances 1 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3623567
Abstract: One of the most severe limits in future design of graphene-based electronic devices is that when supported on a substrate, the electron mobility of graphene is often reduced by an order of magnitude or more. In this paper, via theoretical calculations, we show that the non-polar -Si 3N 4 (0001) surface may be an excellent support for both single-layer or bi-layer graphene to overcome this limit. Since the high- dielectric material is an indispensable component in integrated circuits, the silicon nitride supported graphene as discussed in this paper may provide an ideal platform for future graphene-based electronics. © 2011 Author(s).
Source Title: AIP Advances
URI: http://scholarbank.nus.edu.sg/handle/10635/96736
ISSN: 21583226
DOI: 10.1063/1.3623567
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