Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.105.166602
Title: Graphene field-effect transistors with ferroelectric gating
Authors: Zheng, Y. 
Ni, G.-X.
Toh, C.-T. 
Tan, C.-Y.
Yao, K.
Özyilmaz, B. 
Issue Date: 11-Oct-2010
Citation: Zheng, Y., Ni, G.-X., Toh, C.-T., Tan, C.-Y., Yao, K., Özyilmaz, B. (2010-10-11). Graphene field-effect transistors with ferroelectric gating. Physical Review Letters 105 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.105.166602
Abstract: Recent experiments on ferroelectric gating have introduced a novel functionality, i.e., nonvolatility, in graphene field-effect transistors. A comprehensive understanding in the nonlinear, hysteretic ferroelectric gating and an effective way to control it are still absent. In this Letter, we quantitatively characterize the hysteretic ferroelectric gating using the reference of an independent background doping (nBG) provided by normal dielectric gating. More importantly, we prove that nBG can be used to control the ferroelectric gating by unidirectionally shifting the hysteretic ferroelectric doping in graphene. Utilizing this electrostatic effect, we demonstrate symmetrical bit writing in graphene-ferroelectric field-effect transistors with resistance change over 500% and reproducible no-volatile switching over 105 cycles. ©2010 The American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96734
ISSN: 00319007
DOI: 10.1103/PhysRevLett.105.166602
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