Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3594712
Title: Geometrical effects on spin injection: 3D spin drift diffusion model
Authors: Thingna, J.
Wang, J.-S. 
Issue Date: 15-Jun-2011
Source: Thingna, J., Wang, J.-S. (2011-06-15). Geometrical effects on spin injection: 3D spin drift diffusion model. Journal of Applied Physics 109 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3594712
Abstract: We discuss a three-dimensional (3D) spin drift diffusion (SDD) model to inject spin from a ferromagnet (FM) to a normal metal (N) or semiconductor (SC). Using this model we investigate the problem of spin injection into isotropic materials like GaAs and study the effect of FM contact area and SC thickness on spin injection. We find that in order to achieve detectable spin injection a small contact area or thick SC samples are essential for direct contact spin injection devices. We investigate the use of thin metal films (Cu) proposed by Kumar [Appl. Phys. Lett. 91, 142110 (2007)] and show that they are an excellent substitute for tunneling barriers (TB) in the regime of small contact area. Since most tunneling barriers are prone to pinhole defects, we study the effect of pinholes in AlO tunneling barriers and show that the reduction in the spin-injection ratio (γ) is solely due to the effective area of the pinholes and there is no correlation between the number of pinholes and the spin-injection ratio. © 2011 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96722
ISSN: 00218979
DOI: 10.1063/1.3594712
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