Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/14/39/303
Title: Ge islanding growth on nitridized Si and the effect of Sb surfactant
Authors: Hu, Y.
Wang, X.-S. 
Cue, N.
Wang, X.
Issue Date: 7-Oct-2002
Citation: Hu, Y., Wang, X.-S., Cue, N., Wang, X. (2002-10-07). Ge islanding growth on nitridized Si and the effect of Sb surfactant. Journal of Physics Condensed Matter 14 (39) : 8939-8946. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/14/39/303
Abstract: The growth modes of Ge islands on SiNx-covered Si with and without a surfacrant Sb layer are studied by scanning tunnelling microscopy. It is observed that on SiNx/Si(111), Sb cannot enhance the coverage of (111) facets of Ge islands, which are the dominant features in the late stage of Ge overlayer growth when Sb is not used. However, on SiNx/Si(001), Sb favours the growth of Ge(001) facets, which will shrink during the islanding growth if Sb is not used. The different behaviours with the (111) and (001) substrates suggest that the surfactant effect of Sb on the islanding growth of Ge on SiNx/Si is strongly orientation dependent.
Source Title: Journal of Physics Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/96694
ISSN: 09538984
DOI: 10.1088/0953-8984/14/39/303
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