Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3119215
Title: Gate-controlled nonvolatile graphene-ferroelectric memory
Authors: Zheng, Y. 
Ni, G.-X.
Toh, C.-T. 
Zeng, M.-G. 
Chen, S.-T.
Yao, K.
Özyilmaz, B. 
Issue Date: 2009
Citation: Zheng, Y., Ni, G.-X., Toh, C.-T., Zeng, M.-G., Chen, S.-T., Yao, K., Özyilmaz, B. (2009). Gate-controlled nonvolatile graphene-ferroelectric memory. Applied Physics Letters 94 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3119215
Abstract: In this letter, we demonstrate a nonvolatile memory device in a graphene field-effect-transistor structure using ferroelectric gating. The binary information, i.e., "1" and "0", is represented by the high and low resistance states of the graphene working channels and is switched by controlling the polarization of the ferroelectric thin film using gate voltage sweep. A nonvolatile resistance change exceeding 200% is achieved in our graphene-ferroelectric hybrid devices. The experimental observations are explained by the electrostatic doping of graphene by electric dipoles at the ferroelectric/graphene interface. © 2009 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96690
ISSN: 00036951
DOI: 10.1063/1.3119215
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