Gate-controlled nonvolatile graphene-ferroelectric memory
Zheng, Y. Ni, G.-X. Toh, C.-T. Zeng, M.-G. Chen, S.-T. Yao, K. Özyilmaz, B.
Ni, G.-X.
Chen, S.-T.
Yao, K.
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Abstract
In this letter, we demonstrate a nonvolatile memory device in a graphene field-effect-transistor structure using ferroelectric gating. The binary information, i.e., "1" and "0", is represented by the high and low resistance states of the graphene working channels and is switched by controlling the polarization of the ferroelectric thin film using gate voltage sweep. A nonvolatile resistance change exceeding 200% is achieved in our graphene-ferroelectric hybrid devices. The experimental observations are explained by the electrostatic doping of graphene by electric dipoles at the ferroelectric/graphene interface. © 2009 American Institute of Physics.
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Source Title
Applied Physics Letters
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Date
2009
DOI
10.1063/1.3119215
Type
Article