Please use this identifier to cite or link to this item:
|Title:||Gate-controlled nonvolatile graphene-ferroelectric memory|
|Authors:||Zheng, Y. |
|Citation:||Zheng, Y., Ni, G.-X., Toh, C.-T., Zeng, M.-G., Chen, S.-T., Yao, K., Özyilmaz, B. (2009). Gate-controlled nonvolatile graphene-ferroelectric memory. Applied Physics Letters 94 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3119215|
|Abstract:||In this letter, we demonstrate a nonvolatile memory device in a graphene field-effect-transistor structure using ferroelectric gating. The binary information, i.e., "1" and "0", is represented by the high and low resistance states of the graphene working channels and is switched by controlling the polarization of the ferroelectric thin film using gate voltage sweep. A nonvolatile resistance change exceeding 200% is achieved in our graphene-ferroelectric hybrid devices. The experimental observations are explained by the electrostatic doping of graphene by electric dipoles at the ferroelectric/graphene interface. © 2009 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 24, 2019
WEB OF SCIENCETM
checked on Jan 16, 2019
checked on Dec 28, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.