Please use this identifier to cite or link to this item: https://doi.org/10.1088/0957-4484/24/47/475202
Title: Flexible graphene-PZT ferroelectric nonvolatile memory
Authors: Lee, W.
Kahya, O.
Toh, C.T. 
Özyilmaz, B. 
Ahn, J.-H.
Issue Date: 29-Nov-2013
Citation: Lee, W., Kahya, O., Toh, C.T., Özyilmaz, B., Ahn, J.-H. (2013-11-29). Flexible graphene-PZT ferroelectric nonvolatile memory. Nanotechnology 24 (47) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/24/47/475202
Abstract: We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol-gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm -2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene-PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. © 2013 IOP Publishing Ltd.
Source Title: Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/96659
ISSN: 09574484
DOI: 10.1088/0957-4484/24/47/475202
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

24
checked on Jul 17, 2018

WEB OF SCIENCETM
Citations

19
checked on Jul 9, 2018

Page view(s)

34
checked on Mar 9, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.