Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/9/37/015
Title: Exciton-exciton scattering in semiconducting quantum well structures in the presence of a transverse electric field
Authors: Koh, T.S.
Feng, Y.P. 
Spector, H.N.
Issue Date: 15-Sep-1997
Source: Koh, T.S., Feng, Y.P., Spector, H.N. (1997-09-15). Exciton-exciton scattering in semiconducting quantum well structures in the presence of a transverse electric field. Journal of Physics Condensed Matter 9 (37) : 7845-7853. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/9/37/015
Abstract: Exciton-exciton elastic scattering in semiconducting quantum well structures in the presence of a transverse electric field is theoretically investigated. The scattering cross section is calculated for various electric field strengths and well widths. It is found that the electric field has little effect on the exciton-exciton scattering cross section in narrow quantum wells. On the other hand, in wide quantum wells the electric field significantly polarizes the excitons and enhances the total cross sections, which can exhibit a behavior similar to that typical of free-carrier-free-carrier scattering in the qrantum well. The effect of the electric field on the exciton-exciton scattering is found to be stronger than that on free-carrier-exciton scattering.
Source Title: Journal of Physics Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/96548
ISSN: 09538984
DOI: 10.1088/0953-8984/9/37/015
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