Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/96530
Title: Evolution and ordering of multilayer Ge quantum dots on Si(001)
Authors: Jeyanthinath, M.
Xu, M.J. 
Wang, X.-S. 
Keywords: Germanium
Quantum dots
Scanning tunneling microscopy
Self-assembly
Silicon
Issue Date: Aug-2004
Citation: Jeyanthinath, M.,Xu, M.J.,Wang, X.-S. (2004-08). Evolution and ordering of multilayer Ge quantum dots on Si(001). International Journal of Nanoscience 3 (4-5) : 579-587. ScholarBank@NUS Repository.
Abstract: Evolution and ordering of multilayer Ge islands (up to 14 layers) on Si(001), prepared by physical vapor deposition at about 550°C; were studied using Scanning Tunneling Microscope (STM). In the growth process, it was observed that long huts split during the deposition of Si buffer layer. It can be explained as a consequence of strain due to lattice mismatch and intermixing of Si and Ge to form solid solution. Such a mechanism of splitting could lead the dots to order and uniformity in the subsequent layers. Apart from splitting of huts, the surface corrugation of Si spacer layer influences the nucleation of Ge islands in the next layer.
Source Title: International Journal of Nanoscience
URI: http://scholarbank.nus.edu.sg/handle/10635/96530
ISSN: 0219581X
Appears in Collections:Staff Publications

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