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|Title:||Evolution and ordering of multilayer Ge quantum dots on Si(001)|
Scanning tunneling microscopy
|Citation:||Jeyanthinath, M.,Xu, M.J.,Wang, X.-S. (2004-08). Evolution and ordering of multilayer Ge quantum dots on Si(001). International Journal of Nanoscience 3 (4-5) : 579-587. ScholarBank@NUS Repository.|
|Abstract:||Evolution and ordering of multilayer Ge islands (up to 14 layers) on Si(001), prepared by physical vapor deposition at about 550°C; were studied using Scanning Tunneling Microscope (STM). In the growth process, it was observed that long huts split during the deposition of Si buffer layer. It can be explained as a consequence of strain due to lattice mismatch and intermixing of Si and Ge to form solid solution. Such a mechanism of splitting could lead the dots to order and uniformity in the subsequent layers. Apart from splitting of huts, the surface corrugation of Si spacer layer influences the nucleation of Ge islands in the next layer.|
|Source Title:||International Journal of Nanoscience|
|Appears in Collections:||Staff Publications|
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