Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.susc.2011.06.023
Title: Evidence for the interfacial reaction between Ni adatoms and H-Si(001) surface
Authors: Zhang, Z.
Pan, J.S.
Chai, J.W.
Zhang, J.
Tok, E.S. 
Keywords: Interfacial reaction
Nickel silicide
Silicon
X-ray photoelectron spectroscopy (XPS)
Issue Date: Oct-2011
Source: Zhang, Z., Pan, J.S., Chai, J.W., Zhang, J., Tok, E.S. (2011-10). Evidence for the interfacial reaction between Ni adatoms and H-Si(001) surface. Surface Science 605 (19-20) : 1852-1860. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2011.06.023
Abstract: Hydrogen termination of Si surfaces (H-Si) does not stop the interfacial reaction between Ni adatoms and H-Si(001) surface at room temperature. At low Ni coverage of 0.1% (equivalent to 0.02 ML), X-ray photoelectron spectroscopy (XPS) reveals a binding energy shift of Ni 2p3/2 to 854.0 eV, which corresponds to the formation a NiSi-like environment. As the coverage of Ni increases, the Ni 2p3/2 eventually shifts to 852.8 eV, indicative of formation of metallic Ni. XPS intensity vs Ni coverage analysis reveals a growth process akin to pseudo-layer-by-layer growth mode, thereby suggesting the formation of bulk-Si(001)/NiSi-like/Ni-rich-silicide-like/metallic Ni structure as growth proceeds. For Ni coverage not more that 33% (equivalent to 12.68 ML), Ni remains protected by the silicide environment and no oxidation of Ni to form Ni-oxides was observed even after exposing the samples to air for 400 days. For samples with Ni coverage above 41%, oxidation of Ni is observed by presence of NiO and NiSiO3 peaks at 854.5 and 857.0 eV, respectively. The current studies suggest that there is reaction between Ni adatoms and Si at the growth front on H-Si(001) surfaces upon Ni deposition at room temperature and hydrogen termination does not suppress the interface reaction between Ni and Si. Copyright © 2011 Published by Elsevier B.V. All rights reserved.
Source Title: Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/96529
ISSN: 00396028
DOI: 10.1016/j.susc.2011.06.023
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