Please use this identifier to cite or link to this item: https://doi.org/10.1002/sia.1443
Title: Evaluation of the silicon capping technique in SIMS
Authors: Ng, C.M.
Wee, A.T.S. 
Huan, C.H.A.
Ho, C.S.
Yakovlev, N.
See, A. 
Keywords: B
Si
SIMS
Ultrashallow
Issue Date: Sep-2002
Citation: Ng, C.M., Wee, A.T.S., Huan, C.H.A., Ho, C.S., Yakovlev, N., See, A. (2002-09). Evaluation of the silicon capping technique in SIMS. Surface and Interface Analysis 33 (9) : 735-741. ScholarBank@NUS Repository. https://doi.org/10.1002/sia.1443
Abstract: The effectiveness of the silicon capping technique in ultrashallow secondary ion mass spectrometry using 1 keV O2 + at 56° incidence angle is investigated. It is shown that a capping layer of at least 20 nm is needed to ensure a steady-state erosion rate when profiling the doped region. The matrix intensity is very sensitive to the presence of native oxide, and enhancement is evident for oxides as thin as one monolayer. The oxygen enhancement is further influenced by the high dopant concentration on the sputter surface. The present results favour the model that relates the surface spike present during depth profiling to the sputtering of native oxide.
Source Title: Surface and Interface Analysis
URI: http://scholarbank.nus.edu.sg/handle/10635/96528
ISSN: 01422421
DOI: 10.1002/sia.1443
Appears in Collections:Staff Publications

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