Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1467970
Title: Epitaxial Y-stabilized ZrO2 films on silicon: Dynamic growth process and interface structure
Authors: Wang, S.J. 
Ong, C.K. 
Issue Date: 8-Apr-2002
Citation: Wang, S.J., Ong, C.K. (2002-04-08). Epitaxial Y-stabilized ZrO2 films on silicon: Dynamic growth process and interface structure. Applied Physics Letters 80 (14) : 2541-2543. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1467970
Abstract: We have studied the initial stage of the growth of yttria-stabilized zirconia (YSZ) films on natively oxidized (100) Si wafer by pulsed-laser deposition. X-ray photoelectron spectroscopy and high-resolution electron microscopy show that, for the first few monolayers of crystalline YSZ deposited on (100) Si, the dynamic processes appear to be the decomposition of SiO 2 to SiO, the formation of ZrO2, and the desorption of SiO. The native amorphous SiO2 layer is removed completely with the continued deposition of YSZ. The atomically sharp and commensurate YSZ/Si interface is suggested to have a sequence of Si-Si-O-Zr-O-. © 2002 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96512
ISSN: 00036951
DOI: 10.1063/1.1467970
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