Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2736277
Title: Epitaxial LaAl O3 thin film on silicon: Structure and electronic properties
Authors: Mi, Y.Y.
Yu, Z.
Wang, S.J.
Lim, P.C.
Foo, Y.L.
Huan, A.C.H.
Ong, C.K. 
Issue Date: 2007
Citation: Mi, Y.Y., Yu, Z., Wang, S.J., Lim, P.C., Foo, Y.L., Huan, A.C.H., Ong, C.K. (2007). Epitaxial LaAl O3 thin film on silicon: Structure and electronic properties. Applied Physics Letters 90 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2736277
Abstract: Epitaxial LaAl O3 films have been grown on Si (001) by molecular beam epitaxy with an ultrathin SrTi O3 seed layer. High resolution x-ray diffraction and transmission electron microscopy show the high quality epitaxial structure of LaAl O3 films, and the epitaxial relationship of LaAl O3 with Si is LaAl O3 (001) ∥Si (001) and LaAl O3 [100] ∥Si [110]. The band gap of epitaxial LaAl O3 films was measured to be 6.5±0.1 eV from O 1s loss spectra. Band offsets between crystalline LaAl O3 films and Si were determined to be partitioned equally with 2.86±0.05 eV for valence-band offset and 2.52±0.1 eV for conduction-band offset by using x-ray photoelectron spectroscopy. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96511
ISSN: 00036951
DOI: 10.1063/1.2736277
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