Please use this identifier to cite or link to this item:
|Title:||Epitaxial LaAl O3 thin film on silicon: Structure and electronic properties|
|Citation:||Mi, Y.Y., Yu, Z., Wang, S.J., Lim, P.C., Foo, Y.L., Huan, A.C.H., Ong, C.K. (2007). Epitaxial LaAl O3 thin film on silicon: Structure and electronic properties. Applied Physics Letters 90 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2736277|
|Abstract:||Epitaxial LaAl O3 films have been grown on Si (001) by molecular beam epitaxy with an ultrathin SrTi O3 seed layer. High resolution x-ray diffraction and transmission electron microscopy show the high quality epitaxial structure of LaAl O3 films, and the epitaxial relationship of LaAl O3 with Si is LaAl O3 (001) ∥Si (001) and LaAl O3  ∥Si . The band gap of epitaxial LaAl O3 films was measured to be 6.5±0.1 eV from O 1s loss spectra. Band offsets between crystalline LaAl O3 films and Si were determined to be partitioned equally with 2.86±0.05 eV for valence-band offset and 2.52±0.1 eV for conduction-band offset by using x-ray photoelectron spectroscopy. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 19, 2018
WEB OF SCIENCETM
checked on Apr 2, 2018
checked on May 18, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.