Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1876577
Title: Epitaxial La0.7 Sr0.3 Mn O3 thin films with two in-plane orientations on silicon substrates with yttria-stabilized zirconia and Y Ba2 Cu3 O7-δ as buffer layers
Authors: Goh, W.C. 
Yao, K.
Ong, C.K. 
Issue Date: 1-Apr-2005
Citation: Goh, W.C., Yao, K., Ong, C.K. (2005-04-01). Epitaxial La0.7 Sr0.3 Mn O3 thin films with two in-plane orientations on silicon substrates with yttria-stabilized zirconia and Y Ba2 Cu3 O7-δ as buffer layers. Journal of Applied Physics 97 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1876577
Abstract: Epitaxial La0.7 Sr0.3 Mn O3 (LSMO) thin films were fabricated on silicon substrates by pulsed laser deposition utilizing yttria-stabilized zirconia (YSZ) and Y Ba2 Cu3 O7-δ (YBCO) films as buffer layers. Structural characterization showed that the epitaxial LSMO films were (001) oriented with two in-plane orientations and exhibited a columnar growth structure. In contrast, when LSMO was deposited directly on the YSZSi substrate without the YBCO template layer, it was characterized as a mixture of randomly oriented polycrystalline grains and (001)-oriented grains, without the columnar growth structure. The role of the YBCO layer for achieving the c -axis-oriented epitaxial LSMO film by introducing the dual-in-plane orientation mechanism on the YSZSi substrate has been analyzed. In addition, it was found that the LSMO film with the dual-in-plane orientations on the YBCOYSZSi substrate exhibited a much lower resistivity compared to the LSMO film directly deposited on the YSZSi substrate. This effect is attributed to the existence of the randomly oriented grains in the latter, which resulted in more significant electron scattering at the grain boundaries. The higher density of grain boundaries in the LSMO film on YSZSi also led to a substantially higher magnetoresistance. © 2005 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96510
ISSN: 00218979
DOI: 10.1063/1.1876577
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