Please use this identifier to cite or link to this item: https://doi.org/10.1002/sia.1075
Title: Environmental dependence of thermal oxidation behaviour of silicon nanocrystallites
Authors: Zhu, Y. 
Ong, P.P. 
Keywords: Oxidation
Silicon
X-ray photoelectron spectroscopy
Issue Date: Jun-2001
Source: Zhu, Y., Ong, P.P. (2001-06). Environmental dependence of thermal oxidation behaviour of silicon nanocrystallites. Surface and Interface Analysis 31 (6) : 471-474. ScholarBank@NUS Repository. https://doi.org/10.1002/sia.1075
Abstract: Three kinds of nanosilicon crystallites were prepared by different methods in high vacuum. All of them were composed of tiny silicon crystallites that initially were only mildly oxidized before annealing, but their behaviour upon annealing in a vacuum differed substantially, depending on the environment in which they resided. X-ray photoelectron spectroscopy analyses revealed that the unencapsulated nanoparticles tended to oxidize quite quickly, whereas the nanoparticles sandwiched between layers of Al2O3 matrices were oxidized very slowly even under intense annealing. In the zinc/silicon nanocrystalline mixture, oxidation of the Si0 state was even faster than that of the intermediate Si +1,+2 and +3 states. Both the stability and formation processes of the Si-O bonds in the partially oxidized states differed considerably with different environmental surroundings. However, in all cases, the Si-O bonds of the fully oxidized Si+4 state remained the most stable, to which the less oxidized states tend to gravitate eventually. © 2001 John Wiley & Sons, Ltd.
Source Title: Surface and Interface Analysis
URI: http://scholarbank.nus.edu.sg/handle/10635/96503
ISSN: 01422421
DOI: 10.1002/sia.1075
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