Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1417978
Title: Enhancement Effect of C40 TiSi2 on the C54 Phase Formation
Authors: Chen, S.Y.
Shen, Z.X. 
See, A.K.
Chan, L.H.
Issue Date: 2001
Citation: Chen, S.Y., Shen, Z.X., See, A.K., Chan, L.H. (2001). Enhancement Effect of C40 TiSi2 on the C54 Phase Formation. Journal of the Electrochemical Society 148 (12) : g734-g737. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1417978
Abstract: We report on the formation of a new material, C40 TiSi2, using pulsed laser annealing. On the basis of this laser-induced C40 TiSi2, the growth of the technologically important C54 phase is significantly promoted and can be accomplished with a subsequent rapid thermal anneal or furnace annealing at temperatures far below that for the normal C54 formation. The undesirable C49 TiSi2 is completely bypassed. C40 TiSi2 can also be easily transformed to the C54 phase with thermal treatments and result in the formation of a pure C54 TiSi2 layer. The synthesis of C40 phase without the additional refractory metals and its promotion effect on the C54 phase formation have great potential for applications in the integrated circuit industry for 0.10 μm technology node and beyond. © 2001 The Electrochemical Society. [DOI: 10.1149/1.1417978] All rights reserved.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/96470
ISSN: 00134651
DOI: 10.1149/1.1417978
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