Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jpcs.2012.05.015
Title: Endoepitaxial growth of hexagonal-Fe 13Ge 8 islands on Cubic-Ge(001)
Authors: Li, Z.-P.
Tok, E.S. 
Foo, Y.L.
Keywords: A. Interfaces
A. Nanostructure
B. Epitaxial growth
C. Electron microscopy
D. Diffusion
Issue Date: Oct-2012
Citation: Li, Z.-P., Tok, E.S., Foo, Y.L. (2012-10). Endoepitaxial growth of hexagonal-Fe 13Ge 8 islands on Cubic-Ge(001). Journal of Physics and Chemistry of Solids 73 (10) : 1213-1217. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jpcs.2012.05.015
Abstract: The growth and shape evolution of epitaxial Fe 13Ge 8 (hexagonal lattice) islands on single crystal Ge(001) (cubic lattice) substrate was observed in real time using an in situ ultra-high vacuum transmission electron microscope (TEM). Post-deposition high-resolution TEM in conjunction with stereographic projection enabled the identification of the interface structure between the Fe 13Ge 8 islands and the Ge substrate. Only one low-energy coherent interface formed via Fe 13Ge 8 islands growing into the substrate along the inclined Ge(111) plane. This indicates that minimization of net interfacial energy is the driving force for hexagonal Fe 13Ge 8 islands formation on Ge(001). © 2012 Elsevier Ltd.
Source Title: Journal of Physics and Chemistry of Solids
URI: http://scholarbank.nus.edu.sg/handle/10635/96452
ISSN: 00223697
DOI: 10.1016/j.jpcs.2012.05.015
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