Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevLett.108.206808
Title: Elliot-yafet mechanism in graphene
Authors: Ochoa, H.
Castro Neto, A.H. 
Guinea, F.
Issue Date: 17-May-2012
Citation: Ochoa, H., Castro Neto, A.H., Guinea, F. (2012-05-17). Elliot-yafet mechanism in graphene. Physical Review Letters 108 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevLett.108.206808
Abstract: The differences between spin relaxation in graphene and in other materials are discussed. For relaxation by scattering processes, the Elliot-Yafet mechanism, the relation between the spin and the momentum scattering times, acquires a dependence on the carrier density, which is independent of the scattering mechanism and the relation between mobility and carrier concentration. This dependence puts severe restrictions on the origin of the spin relaxation in graphene. The density dependence of the spin relaxation allows us to distinguish between ordinary impurities and defects which modify locally the spin-orbit interaction. © 2012 American Physical Society.
Source Title: Physical Review Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96443
ISSN: 00319007
DOI: 10.1103/PhysRevLett.108.206808
Appears in Collections:Staff Publications

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