Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.50.5352
Title: Electronic structure of the Si(100) c(4×2) and p(2×2) surfaces
Authors: Low, K.C.
Ong, C.K. 
Issue Date: 1994
Source: Low, K.C., Ong, C.K. (1994). Electronic structure of the Si(100) c(4×2) and p(2×2) surfaces. Physical Review B 50 (8) : 5352-5357. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.50.5352
Abstract: We present a theoretical study of the geometric and electronic structures of the Si(100) surface. The calculations are performed at the parametrized tight-binding molecular-dynamics level using a computation cell consisting of five surface layers with 32 atoms on each layer. The p(2×2) and c(4×2) surfaces are found to be equally likely to have ground-state structures. The surface states are determined based on the optimized geometric structure of p(2×2) and c(4×2). The results are compared with available experimental data and previous calculations. © 1994 The American Physical Society.
Source Title: Physical Review B
URI: http://scholarbank.nus.edu.sg/handle/10635/96434
ISSN: 01631829
DOI: 10.1103/PhysRevB.50.5352
Appears in Collections:Staff Publications

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