Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/96433
Title: Electronic structure of the reconstructed InP(100) surface
Authors: Chan, B.C.
Ong, C.K. 
Keywords: InP
semiconductor surface
Surface states
Issue Date: 1991
Source: Chan, B.C.,Ong, C.K. (1991). Electronic structure of the reconstructed InP(100) surface. Journal of Physics and Chemistry of Solids 52 (5) : 699-703. ScholarBank@NUS Repository.
Abstract: The Chadi total energy algorithm was extended to perform tight binding calculations on the InP(100) surface. The tight binding parameters for the In-P interactions were determined in the usual way and those for the In-In interactions obtained from the Harrison universal parameter scheme. From considerations of the total energy, we found that 2 × 2A and 4 × 2 asymmetrical dimer structures are equally probable. However, from the comparison of the position of filled and unfilled surface states with the experimental value, we conclude that the 4 × 2 structure could be the optimum dimerized structure on the InP(100) surface. © 1991.
Source Title: Journal of Physics and Chemistry of Solids
URI: http://scholarbank.nus.edu.sg/handle/10635/96433
ISSN: 00223697
Appears in Collections:Staff Publications

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