Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jmmm.2010.05.017
Title: Electronic band structure matching for half- and full-Heusler alloys
Authors: Ko, V.
Han, G.
Feng, Y.P. 
Keywords: Band structure
First principle
Giant magnetoresistance
Heusler alloy
Spacer
Issue Date: Oct-2010
Citation: Ko, V., Han, G., Feng, Y.P. (2010-10). Electronic band structure matching for half- and full-Heusler alloys. Journal of Magnetism and Magnetic Materials 322 (20) : 2989-2993. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2010.05.017
Abstract: We explore the lattice and the electronic band structures matching between the half-metallic Heusler alloys (half-Heusler NiMnSb and full-Heusler Co 2MnSi) and several hypothetical non-magnetic Heusler alloys by using first principle calculations. The lattice and band structure matching are almost perfectly satisfied between the two materials of similar crystal structures: (i) NiMnSb and XYSb and (ii) Co2MnSi and X2YSi, where X, Y=Ni or Cu. Owing to the high interface spin scattering asymmetry, these materials are promising to realize a high giant magnetoresistance at room temperature. © 2010 Elsevier B.V.
Source Title: Journal of Magnetism and Magnetic Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/96420
ISSN: 03048853
DOI: 10.1016/j.jmmm.2010.05.017
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