Please use this identifier to cite or link to this item:
|Title:||Electron tunneling through ultrathin boron nitride crystalline barriers|
Castro Neto, A.H.
|Citation:||Britnell, L., Gorbachev, R.V., Jalil, R., Belle, B.D., Schedin, F., Katsnelson, M.I., Eaves, L., Morozov, S.V., Mayorov, A.S., Peres, N.M.R., Castro Neto, A.H., Leist, J., Geim, A.K., Ponomarenko, L.A., Novoselov, K.S. (2012-03-14). Electron tunneling through ultrathin boron nitride crystalline barriers. Nano Letters 12 (3) : 1707-1710. ScholarBank@NUS Repository. https://doi.org/10.1021/nl3002205|
|Abstract:||We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel. © 2012 American Chemical Society.|
|Source Title:||Nano Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 20, 2018
WEB OF SCIENCETM
checked on Apr 16, 2018
checked on Mar 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.