Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4868132
Title: Electric field effect in ultrathin black phosphorus
Authors: Koenig, S.P.
Doganov, R.A.
Schmidt, H.
Castro Neto, A.H. 
Özyilmaz, B. 
Issue Date: 10-Mar-2014
Citation: Koenig, S.P., Doganov, R.A., Schmidt, H., Castro Neto, A.H., Özyilmaz, B. (2014-03-10). Electric field effect in ultrathin black phosphorus. Applied Physics Letters 104 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4868132
Abstract: Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here, we demonstrate few-layer black phosphorus field effect devices on Si/SiO2 and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm2/Vs and drain current modulation of over 103. At low temperatures, the on-off ratio exceeds 105, and the device exhibits both electron and hole conduction. Using atomic force microscopy, we observe significant surface roughening of thin black phosphorus crystals over the course of 1 h after exfoliation. © 2014 AIP Publishing LLC.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96391
ISSN: 00036951
DOI: 10.1063/1.4868132
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

623
checked on Oct 19, 2018

WEB OF SCIENCETM
Citations

603
checked on Oct 3, 2018

Page view(s)

45
checked on Oct 19, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.