Please use this identifier to cite or link to this item: https://doi.org/10.1109/3.631282
Title: Effects of electric field on the exciton linewidth broadening due to scattering by free carriers in semiconducting quantum-well structures
Authors: Koh, N.S.
Feng, Y.P. 
Spector, H.N.
Keywords: Electric field
Exciton linewidth
Quantum wells
Issue Date: Oct-1997
Source: Koh, N.S.,Feng, Y.P.,Spector, H.N. (1997-10). Effects of electric field on the exciton linewidth broadening due to scattering by free carriers in semiconducting quantum-well structures. IEEE Journal of Quantum Electronics 33 (10) : 1774-1778. ScholarBank@NUS Repository. https://doi.org/10.1109/3.631282
Abstract: The effects of an applied electric field perpendicular to the well layers on the broadening of the exciton linewidth due to scattering by free carriers in semiconducting quantum-well (QW) structures is theoretically investigated based on a finite confining potential model. The dependence of the free carrier-exciton linewidth broadening on carrier concentration, temperature, and well width are calculated and discussed for various electric field strengths. It is found that the influence of the electric field on the linewidth broadening is appreciable in wide wells, while in narrow wells little change is shown even in the presence of a strong electric field.
Source Title: IEEE Journal of Quantum Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/96360
ISSN: 00189197
DOI: 10.1109/3.631282
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