Please use this identifier to cite or link to this item:
|Title:||Effects of electric field on the exciton linewidth broadening due to scattering by free carriers in semiconducting quantum-well structures|
|Source:||Koh, N.S.,Feng, Y.P.,Spector, H.N. (1997-10). Effects of electric field on the exciton linewidth broadening due to scattering by free carriers in semiconducting quantum-well structures. IEEE Journal of Quantum Electronics 33 (10) : 1774-1778. ScholarBank@NUS Repository. https://doi.org/10.1109/3.631282|
|Abstract:||The effects of an applied electric field perpendicular to the well layers on the broadening of the exciton linewidth due to scattering by free carriers in semiconducting quantum-well (QW) structures is theoretically investigated based on a finite confining potential model. The dependence of the free carrier-exciton linewidth broadening on carrier concentration, temperature, and well width are calculated and discussed for various electric field strengths. It is found that the influence of the electric field on the linewidth broadening is appreciable in wide wells, while in narrow wells little change is shown even in the presence of a strong electric field.|
|Source Title:||IEEE Journal of Quantum Electronics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 13, 2018
checked on Feb 18, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.