Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/96355
Title: Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques
Authors: Feng, Z.C.
Ferguson, I.
Stall, R.A.
Li, K.
Shi, Y.
Singh, H.
Tone, K.
Zhao, J.H.
Wee, A.T.S. 
Tan, K.L. 
Adar, F.
Lenain, B.
Keywords: 6H-SiC
Annealing
FTIR
Ion-Implantation
Raman Scattering
SIMS
X-Ray Diffraction
Issue Date: 1998
Citation: Feng, Z.C.,Ferguson, I.,Stall, R.A.,Li, K.,Shi, Y.,Singh, H.,Tone, K.,Zhao, J.H.,Wee, A.T.S.,Tan, K.L.,Adar, F.,Lenain, B. (1998). Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques. Materials Science Forum 264-268 (PART 2) : 693-696. ScholarBank@NUS Repository.
Abstract: Effects of Al+-C+ co-implantation and annealing in epitaxial n-type 6H-SiC have been studied by high resolution X-ray diffraction (HRXRD), Fourier transform infrared (FTIR) reflectance, Raman scattering (RS) and Secondary ion mass spectroscopy (SIMS). Correlations between structural/optical properties and ion implantation/annealing processes are presented. The recovery of the 6H-SiC crystallinity due to the high temperature annealing after Al+-C+ implantation has been realized and confirmed by this study.
Source Title: Materials Science Forum
URI: http://scholarbank.nus.edu.sg/handle/10635/96355
ISSN: 02555476
Appears in Collections:Staff Publications

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