Please use this identifier to cite or link to this item: https://doi.org/10.1166/jnn.2005.084
Title: Effect of thermal treatment on carbon-doped silicon oxide low dielectric constant materials
Authors: Xie, J.L.
Lin, J.Y. 
Wang, Y.H.
Narayanan, B.
Wang, M.R.
Kumar, R.
Keywords: Carbon-Doped
Low-k Material
PECVD
Thermal Stability
TMCTS
Issue Date: 2005
Citation: Xie, J.L., Lin, J.Y., Wang, Y.H., Narayanan, B., Wang, M.R., Kumar, R. (2005). Effect of thermal treatment on carbon-doped silicon oxide low dielectric constant materials. Journal of Nanoscience and Nanotechnology 5 (4) : 550-557. ScholarBank@NUS Repository. https://doi.org/10.1166/jnn.2005.084
Abstract: Carbon-doped silicon oxide (SiOCH) low dielectric constant (low-k) material is a good candidate for advanced interconnect technology. Good thermal stability of the dielectric is required due to the many thermal processes involved during IC fabrication. The thermal stability of tetramethylcyclote-trasiloxane (TMCTS) based plasma-enhanced chemical vapor deposition (PECVD) carbon doped IOW-k material with annealing temperature from 400 to 800 °C in N 2 was studied. The thermal stability temperature of TMCTS based carbon doped low-k material is 600 °C. Above 600 °C annealing, the thermal energy can break Si-CH 3, Si-C, Si-H, and C-H bonds leading to outgasing, which results in film composition change, weight loss, and thickness shrinkage. Film composition changes, especially carbon loss and oxygen incorporation, can degrade its reliability extremely. Carbon is desorbed in the form of CH 4, CO, and other hydrocarbon. Copyright © 2005 American Scientific Publishers All rights reserved.
Source Title: Journal of Nanoscience and Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/96345
ISSN: 15334880
DOI: 10.1166/jnn.2005.084
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

3
checked on May 21, 2018

WEB OF SCIENCETM
Citations

3
checked on May 21, 2018

Page view(s)

41
checked on May 18, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.