Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2771065
Title: Effect of low fluence laser annealing on ultrathin Lu2 O3 high- k dielectric
Authors: Darmawan, P.
Lee, P.S.
Setiawan, Y.
Ma, J.
Osipowicz, T. 
Issue Date: 2007
Citation: Darmawan, P., Lee, P.S., Setiawan, Y., Ma, J., Osipowicz, T. (2007). Effect of low fluence laser annealing on ultrathin Lu2 O3 high- k dielectric. Applied Physics Letters 91 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2771065
Abstract: The effect of low fluence single pulse laser annealing on a pulsed laser deposited high- k dielectric, Lu2 O3 is reported. With low fluence laser irradiation, high " k " of 45 is achieved with an equivalent oxide thickness of 0.39 nm, without taking into account the quantum mechanical tunneling effect. High-resolution transmission electron microscopy micrograph revealed well-ordered epitaxial-like interfacial layer. High-resolution Rutherford backscattering confirmed the presence of Lu-based silicate layer at the interface. It was proposed that the high dielectric constant was caused by the increased ionic polarizability in the film, thereby increasing the ionic contribution of the dielectric constant. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96319
ISSN: 00036951
DOI: 10.1063/1.2771065
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

18
checked on Nov 14, 2018

WEB OF SCIENCETM
Citations

16
checked on Nov 6, 2018

Page view(s)

37
checked on Nov 9, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.