Please use this identifier to cite or link to this item:
|Title:||Effect of low fluence laser annealing on ultrathin Lu2 O3 high- k dielectric|
|Citation:||Darmawan, P., Lee, P.S., Setiawan, Y., Ma, J., Osipowicz, T. (2007). Effect of low fluence laser annealing on ultrathin Lu2 O3 high- k dielectric. Applied Physics Letters 91 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2771065|
|Abstract:||The effect of low fluence single pulse laser annealing on a pulsed laser deposited high- k dielectric, Lu2 O3 is reported. With low fluence laser irradiation, high " k " of 45 is achieved with an equivalent oxide thickness of 0.39 nm, without taking into account the quantum mechanical tunneling effect. High-resolution transmission electron microscopy micrograph revealed well-ordered epitaxial-like interfacial layer. High-resolution Rutherford backscattering confirmed the presence of Lu-based silicate layer at the interface. It was proposed that the high dielectric constant was caused by the increased ionic polarizability in the film, thereby increasing the ionic contribution of the dielectric constant. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 12, 2018
WEB OF SCIENCETM
checked on Sep 4, 2018
checked on Sep 14, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.