Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2762277
Title: Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe
Authors: Mi, Y.Y.
Wang, S.J.
Chai, J.W.
Seng, H.L.
Pan, J.S.
Foo, Y.L.
Huan, C.H.A.
Ong, C.K. 
Issue Date: 2007
Citation: Mi, Y.Y., Wang, S.J., Chai, J.W., Seng, H.L., Pan, J.S., Foo, Y.L., Huan, C.H.A., Ong, C.K. (2007). Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe. Applied Physics Letters 91 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2762277
Abstract: The effect of interfacial oxynitride layer on the band alignment and thermal stability of amorphous LaAl O3 Si0.75 Ge0.25 heterojunction has been investigated. The presence of interfacial oxynitride layer shifts the band alignment due to the modification of interfacial dipole. During the thermal annealing, it was found that the interfacial electronic structures were altered, and the valence-band maximum of LaAl O3 films shifted to the lower energy due to the diffusion of nitrogen species from the interfaces into LaAl O3 films at high annealing temperature. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96313
ISSN: 00036951
DOI: 10.1063/1.2762277
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

3
checked on Jun 22, 2018

WEB OF SCIENCETM
Citations

3
checked on May 15, 2018

Page view(s)

43
checked on Jun 1, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.