Please use this identifier to cite or link to this item:
|Title:||Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe|
|Citation:||Mi, Y.Y., Wang, S.J., Chai, J.W., Seng, H.L., Pan, J.S., Foo, Y.L., Huan, C.H.A., Ong, C.K. (2007). Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe. Applied Physics Letters 91 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2762277|
|Abstract:||The effect of interfacial oxynitride layer on the band alignment and thermal stability of amorphous LaAl O3 Si0.75 Ge0.25 heterojunction has been investigated. The presence of interfacial oxynitride layer shifts the band alignment due to the modification of interfacial dipole. During the thermal annealing, it was found that the interfacial electronic structures were altered, and the valence-band maximum of LaAl O3 films shifted to the lower energy due to the diffusion of nitrogen species from the interfaces into LaAl O3 films at high annealing temperature. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 11, 2019
WEB OF SCIENCETM
checked on Jan 2, 2019
checked on Dec 28, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.