Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.87.195448
Title: Effect of charged line defects on conductivity in graphene: Numerical Kubo and analytical Boltzmann approaches
Authors: Radchenko, T.M.
Shylau, A.A.
Zozoulenko, I.V.
Ferreira, A. 
Issue Date: 31-May-2013
Source: Radchenko, T.M., Shylau, A.A., Zozoulenko, I.V., Ferreira, A. (2013-05-31). Effect of charged line defects on conductivity in graphene: Numerical Kubo and analytical Boltzmann approaches. Physical Review B - Condensed Matter and Materials Physics 87 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.87.195448
Abstract: Charge carrier transport in single-layer graphene with one-dimensional charged defects is studied theoretically. Extended charged defects, considered an important factor for mobility degradation in chemically vapor-deposited graphene, are described by a self-consistent Thomas-Fermi potential. A numerical study of electronic transport is performed by means of a time-dependent real-space Kubo approach in honeycomb lattices containing millions of carbon atoms, capturing the linear response of realistic size systems in the highly disordered regime. Our numerical calculations are complemented with a kinetic transport theory describing charge transport in the weak scattering limit. The semiclassical transport lifetimes are obtained by computing scattered amplitudes within the second Born approximation. The transport electron-hole asymmetry found in the semiclassical approach is consistent with the Kubo calculations. In the strong scattering regime, the conductivity is found to be a sublinear function of electronic density and weakly dependent on the Thomas-Fermi screening wavelength. We attribute this atypical behavior to the extended nature of one-dimensional charged defects. Our results are consistent with recent experimental reports. © 2013 American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96297
ISSN: 10980121
DOI: 10.1103/PhysRevB.87.195448
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