Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/8/4/009
Title: Easy and accurate method to determine simultaneously the free energy level and the capture cross section of a trap centre
Authors: Tan, H.S. 
Han, M.K. 
Ng, S.C. 
Issue Date: Apr-1993
Citation: Tan, H.S., Han, M.K., Ng, S.C. (1993-04). Easy and accurate method to determine simultaneously the free energy level and the capture cross section of a trap centre. Semiconductor Science and Technology 8 (4) : 530-537. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/8/4/009
Abstract: A method which permits simultaneous determination of the values of the free energy of ionization, the capture cross section and the concentration of a trap in a semiconductor is presented. The method depends on an accurate fit of a set of analytical expressions to the experimental data obtained by studying the variation of transient capacitance amplitudes with the duration of a filling pulse bias in a junction experiment. The analytical expressions used are based on the rigorous theoretical model of Pons. Various criteria which must be observed to ensure reliable results are carefully worked out in detail. The effectiveness of the present method is demonstrated on two copper-induced electron traps in gallium arsenide phosphide and a laser radiation-induced electron trap in silicon.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/96284
ISSN: 02681242
DOI: 10.1088/0268-1242/8/4/009
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Sep 25, 2018

WEB OF SCIENCETM
Citations

1
checked on Sep 25, 2018

Page view(s)

36
checked on Sep 21, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.