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https://scholarbank.nus.edu.sg/handle/10635/96280
DC Field | Value | |
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dc.title | Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrix | |
dc.contributor.author | Jie, Y.X. | |
dc.contributor.author | Xiong, Y.N. | |
dc.contributor.author | Wee, A.T.S. | |
dc.contributor.author | Huan, C.H.A. | |
dc.contributor.author | Ji, W. | |
dc.date.accessioned | 2014-10-16T09:21:36Z | |
dc.date.available | 2014-10-16T09:21:36Z | |
dc.date.issued | 2000-12-11 | |
dc.identifier.citation | Jie, Y.X.,Xiong, Y.N.,Wee, A.T.S.,Huan, C.H.A.,Ji, W. (2000-12-11). Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrix. Applied Physics Letters 77 (24) : 3926-3928. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96280 | |
dc.description.abstract | The optical nonlinearity and excited carrier lifetime in Ge nanocrystals (nc-Ge) embedded in a silica matrix have been investigated by means of single beam z scan and pump-probe techniques with laser pulse duration of 35 ps and 532 nm wavelength. The nc-Ge samples were prepared using magnetron cosputtering and postgrowth annealing at 800 °C. The nonlinear absorption coefficient α2 and refractive index n2 were found to range between 190 and 760 cm/GW, and 0.0026 and 0.0082 cm2/GW, respectively, and be proportional to the Ge concentration in the film. The confined excited carriers were found to depopulate with a lifetime of ∼70 ps. The nonlinearity in Ge nanocrystals is deduced to originate mainly from excited carrier absorption, with two-photon absorption providing a small contribution. © 2000 American Institute of Physics. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 77 | |
dc.description.issue | 24 | |
dc.description.page | 3926-3928 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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